4.7 Article

Unraveling interface characteristics of Zn(O,S)/Cu(In,Ga)Se2 at nanoscale: Enhanced hole transport by tuning band offsets

Journal

APPLIED SURFACE SCIENCE
Volume 509, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2019.144782

Keywords

Cu(InGa)Se-2 thin-film solar cells; Zn(O,S) buffer layer; Kelvin probe force microscopy (KPFM); Micro-Raman scattering spectroscopy

Funding

  1. Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) of Korea [2016M1A2A2936784, 2016M1A2A2936754]
  2. DGIST R&D Program - Ministry of Science, ICT & Future Planning, Republic of Korea [19-BD-05]
  3. Basic Science Research Program of the NRF of Korea - Ministry of Education [2018R1A6A1A03025340]
  4. National Research Foundation of Korea [19-BD-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Environment-friendly Cu(In,Ga)Se-2 (CIGS) solar cells requires the replacement of Cd-containing buffers with non-toxic materials. Zn(O,S) buffers have been developed and yielded even better efficiency than CdS-buffered CIGS thin-film solar cells [23.35%, Ref. [6]]. In this work, we studied band offsets of Zn(O,S) and CIGS interfaces. The Cd-free buffer layers were deposited with 1.0%, 1.3%, and 1.6% oxygen (O-2) gas partial pressure during the deposition. Effects of the oxygen partial pressure on the structure and electronic properties of the devices were investigated by micro-Raman scattering spectroscopy and Kelvin probe force microscopy, respectively. We achieved depth-profiling of spatial work function mapping across the interface between the absorbers and the buffers. The best efficiency sample, grown using 1.3% of oxygen, showed 80 mV spike-like band offsets. We propose that the efficiency can be improved through tailoring of the band offsets at the interface as well as improving the absorber and the buffer materials.

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