Journal
APPLIED PHYSICS LETTERS
Volume 116, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0004923
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Funding
- National Key Research and Development Program [2016YFB0400800]
- NNSF [61574116, 61974124]
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We report a low-energy path to enhance the incorporation of Mg on the V-B site in monolayer hexagonal boron nitride (h-BN) by an N-rich condition for effective p-type conductivity. Density functional theory calculations reveal that V-B and Mg-B both behave as a shallow acceptor for p-type conduction of h-BN. The N-rich condition is found to promote the formation of V-B as a low-barrier site for Mg-B incorporation. Experimentally, Mg p-type doping is achieved in a h-BN monolayer under N-2 (or NH3) gas flow through a chemical vapor deposition method. The surface current of Mg-doped h-BN has been enhanced by three times up to 32 mu A under a 8V external voltage. This approach provides excellent p-type conductivity in monolayer h-BN for future applications in two-dimensional optoelectronic devices.
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