Journal
APPLIED PHYSICS EXPRESS
Volume 13, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ab9169
Keywords
graphene; h-BN; heterostructure; CVD; LEEM
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Funding
- JSPS KAKENHI [16H02120]
- Grants-in-Aid for Scientific Research [16H02120] Funding Source: KAKEN
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We demonstrate controlled chemical vapor deposition growth of lateral and vertical heterostructures of graphene and hexagonal boron nitride (h-BN) on Cu substrates by changing supply sequence of their precursors. When the graphene precursors are switched by the h-BN precursors, h-BN grows from the edges of the existing graphene islands, resulting in the lateral heterostrcutures. In the reversed supply sequence, on the other hand, graphene grows at the interface between the h-BN and Cu substrate, leading to the vertical heterostructures. This simple method of controlling vertical and lateral heterostructures allows to produce more complicated heterostructures by designing the precursor supply sequence.
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