Journal
APPLIED PHYSICS EXPRESS
Volume 13, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ab95f0
Keywords
GaN-on-Si; Device physics; Microdisk laser; Junction temperature
Categories
Funding
- Key-Area Research and Development Program of GuangDong Province [2019B010130001, 2019B090917005, 2020B010174004]
- National Key RD Program [2016YFB0400100, 2016YFB0400104, 2018YFA0703702]
- National Natural Science Foundation of China [61534007, 61775230, 61804162, 61874131]
- Strategic Priority Research Program of CAS [XDB43000000, XDB43020200]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-JSC014, ZDBS-LY-JSC040]
- CAS Interdisciplinary Innovation Team
- Key R&D Program of Jiangsu Province [BE2017079]
- Natural Science Foundation of Jiangsu Province [BE2017079, BK20180253]
- Natural Science Foundation of Jiangxi Province [20181ACB20002]
- Suzhou Science and Technology Program [SYG201846, SYG201927]
- China Postdoctoral Science Foundation [2018M632408]
- Open Fund of the State Key Laboratory of Reliability and Intelligence of Electrical Equipment [EERIKF2018001]
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GaN-based microdisk lasers grown on Si have a wide application prospect in communication and Si photonics. However, the relatively large threshold current and thermal resistance often cause a very high junction temperature, which severely affects the device performance. Here we analyzed the thermal characteristics of GaN-based microdisk lasers grown on Si substrates. According to the simulation results, we have significantly reduced the threshold current and junction temperature by reducing the current injection area and device size, respectively. As a result, continuous wave electrically injected lasing has been achieved at room temperature for both microring and microdisk lasers grown on Si.
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