Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 30, Issue 24, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202002625
Keywords
molecule charge transfer doping; p-type oxide semiconductor; solution process; thin-film transistor
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Funding
- Centre for Advanced Soft-Electronics, Ministry of Science and ICT through the National Research Foundation - Korea government [2017R1E1A1A01075360, 2013M3A6A5073183]
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The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p-type oxide semiconductors has severely restricted the development of metal oxide-based transparent p-n junctions and complementary circuits. Here, an efficient and stable doping process for p-type oxide semiconductors by using molecule charge transfer doping with tetrafluoro-tetracyanoquinodimethane (F(4)TCNQ) is reported. The selections of a suitable dopant and geometry play a crucial role in the charge-transfer doping effect. The insertion of a F(4)TCNQ thin dopant film (2-7 nm) between a Au source-drain electrode and solution-processed p-type copper oxide (CuxO) film in bottom-gate top-contact thin-film transistors (TFTs) provides a mobility enhancement of over 20-fold with the desired threshold voltage adjustment. By combining doped p-type CuxO and n-type indium gallium zinc oxide TFTs, a solution-processed transparent complementary metal-oxide semiconductor inverter is demonstrated with a high gain voltage of 50. This novel p-doping method is expected to accelerate the development of high-performance and reliable p-channel oxide transistors and has the potential for widespread applications.
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