Journal
CARBON
Volume 96, Issue -, Pages 799-804Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2015.10.015
Keywords
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Funding
- Natural Science Foundation of China [51322209, 21473124]
- Sino-German Center for Research Promotion [GZ 871]
- Ministry of Education [20120141110030]
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Liquid metal, such as Ga, has been demonstrated to be a good catalyst to grow uniform graphene at about 1000 degrees C. However, at reduced temperature, the high surface tension of Ga causes the limited spreading-ability over the supporting substrate, which prevents the formation of large-area graphene. Here we present that the addition of Cu could efficiently decrease the surface tension of Ga, thus achieving a larger coverage. We succeeded in growing large-area, uniform and single-layer graphene at 800 degrees C by atmospheric chemical vapour deposition using CH4 as the carbon source. (C) 2015 Elsevier Ltd. All rights reserved.
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