4.8 Article

Layer Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly Anisotropic Black As

Journal

ACS NANO
Volume 14, Issue 5, Pages 5988-5997

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c01506

Keywords

2D materials; black arsenic; HAADF-STEM; surface plasmon; EELS; thickness-dependent EELS; degradation

Funding

  1. UMN MRSEC program [DMR-1420013]
  2. SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program - NIST
  3. NSF through the UMN MRSEC program [DMR1420013]
  4. NSF [ECCS-1708769]

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Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using scanning transmission electron microscopy (STEM) imaging and spectroscopy. Atomic- resolution high-angle annular dark-field (HAADF)-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-electron energy loss spectroscopy is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied, highlighting high sensitivity to moisture in the air.

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