Journal
ACS NANO
Volume 14, Issue 5, Pages 5988-5997Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c01506
Keywords
2D materials; black arsenic; HAADF-STEM; surface plasmon; EELS; thickness-dependent EELS; degradation
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Funding
- UMN MRSEC program [DMR-1420013]
- SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program - NIST
- NSF through the UMN MRSEC program [DMR1420013]
- NSF [ECCS-1708769]
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Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using scanning transmission electron microscopy (STEM) imaging and spectroscopy. Atomic- resolution high-angle annular dark-field (HAADF)-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-electron energy loss spectroscopy is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied, highlighting high sensitivity to moisture in the air.
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