Journal
ACS NANO
Volume 14, Issue 4, Pages 4456-4462Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b10057
Keywords
germanium disulfide; complex 2D material; sub-angstrom imaging bonding mechanism; in-plane anisotropy
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Funding
- National Natural Science Foundation of China [21903063, 11974270, 61774123]
- 111 Project 2.0 [BP2018008]
- Science and Technology Department of Jiangsu Province [BK20170414]
- Deutsche Forschungsgemeinschaft (DFG) [SFB 917]
- Leverhulme Early Career Fellowship
- Isaac Newton Trust
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies of Xi'an Jiaotong University
- Materials Studio for Neuro-inspired Computing (mSonic)
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Materials with layered crystal structures and high in-plane anisotropy, such as black phosphorus, present unique properties and thus promise for applications in electronic and photonic devices. Recently, the layered structures of GeS, and GeSe(2 )were utilized for high-performance polarization-sensitive photodetection in the short wavelength region due to their high in-plane optical anisotropy and wide band gap. The highly complex, low-symmetric (monoclinic) crystal structures are at the origin of the high in-plane optical anisotropy, but the structural nature of the corresponding nanostructures remains to be fully understood. Here, we present an atomic-scale characterization of monoclinic GeS2 nanostructures and quantify the in-plane structural anisotropy at the sub-angstrom level in real space by Cs-corrected scanning transmission electron microscopy. We elucidate the origin of this high in-plane anisotropy in terms of ordered and disordered arrangement of [GeS4] tetrahedra in GeS2 monolayers, through density functional theory (DFT) calculations and orbital-based bonding analyses. We also demonstrate high in-plane mechanical, electronic, and optical anisotropies in monolayer GeS(2 )and envision phase transitions under uniaxial strain that could potentially be exploited for nonvolatile memory applications.
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