Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 23, Pages 26586-26592Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c03762
Keywords
molybdenum ditelluride; oxygen plasma; surface oxidation; self-terminated oxidation; degenerate doping; contact resistance
Funding
- National Natural Science Foundation of China [11804397]
- Hunan High-End Talent Program [2019RS1006]
- Global Research Laboratory (GRL) Program - Ministry of Science, ICT & Future Planning via National Research Foundation of Korea (NRF) [2016K1A1A2912707]
- Global Frontier R&D Program - Ministry of Science, ICT & Future Planning via National Research Foundation of Korea (NRF) [2013M3A6B1078873]
- [IBS-R019-D1]
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We introduce an effective method to degenerately dope MoTe2 by oxidizing its surface into the p-dopant MoOx in oxygen plasma. As a self-terminated process, the oxidation is restricted only in the very top layer, therefore offering us an easy and efficient control. The degenerate p-doping with the hole concentration of 2.5 X 10(13 )cm(-2) can be obtained by applying a similar to 300 s O-2 plasma treatment. Using the degenerately doped MoTe2, we demonstrate a record low contact resistance of 0.6 k Omega mu m for MoTe2. Our measurement highlights an excellent stability for the plasma-doped MoTe2. The doped characteristics are robust with no significant degradation even after a one-year exposure to the air. The oxygen plasma doping technique is compatible with the conventional semiconductor processes, which can be utilized to realize high-performance MoTe2 field-effect transistors (FETs) or tunnel FETs in the future.
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