Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 23, Pages 26717-26726Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c06428
Keywords
organic semiconductor; buried interface; organic-inorganic interface; organic light-emitting diode; ultrathin films; coarse-grained simulations; GIWAXS
Funding
- US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DESC0002161]
- NSF through the University of Wisconsin Materials Research Science and Engineering Center [DMR-1720415]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-76SF00515]
- Department of Energy, Office of Science, Basic Energy Sciences, Division of Materials Science and Engineering
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While the bulk structure of vapor-deposited glasses has been extensively studied, structure at buried interfaces has received little attention, despite being important for organic electronic applications. To learn about glass structure at buried interfaces, we study the structure of vapor-deposited glasses of the organic semiconductor DSA-Ph (1,4-di-[4-(N,N-diphenypamino]styrylbenzene) as a function of film thickness; the structure is probed with grazing incidence X-ray scattering. We deposit on silicon and gold substrates and span a film thickness range of 10-600 nm. Our experiments demonstrate that interfacial molecular packing in vapor-deposited glasses of DSA-Ph is more disordered compared to the bulk. At a deposition temperature near room temperature, we estimate similar to 8 nm near the substrate can have modified molecular packing. Molecular dynamics simulations of a coarse-grained representation of DSA-Ph reveal a similar length scale. In both the simulations and the experiments, deposition temperature controls glass structure beyond this interfacial layer of a few nanometers.
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