Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 24, Pages 27001-27009Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b22853
Keywords
Bi2Te3; diffusion barrier; shear strength; fracture mode; thermoelectric properties; interfacial stability
Funding
- Ministry of Science and Technology of Taiwan [107-2221-E-008-004-MY3]
- Industrial Technology Research Institute of Taiwan
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Bismuth telluride (Bi2Te3)-based thermoelectric materials are well-known for their high figure-of-merit (zT value) in the low-temperature region. Stable joints in the module are essential for creating a reliable device for long-term applications. This study used electroless Co-P to prevent a severe interfacial reaction between the joints of solder and Bi2Te3. A thick and brittle SnTe intermetallic compound layer was successfully inhibited. The strength of the joints improved, and the fracture mode became more ductile; furthermore, there was no significant degradation of thermoelectric properties after depositing the Co-P layer after long-term aging. The result suggests that electroless Co-P could enhance the interfacial stability of the joints and be an effective diffusion barrier for Bi2Te3 thermoelectric modules.
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