Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 14, Pages 16592-16600Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b23158
Keywords
perovskite; X-ray detector; optoelectronic properties; large size wafer; sensitivity
Funding
- National Key Research and Development Program of China [2016YFA0202403, 2017YFA0204800]
- National Natural Science Foundation of China [61604091, 91733301, 61704099]
- Fund Projects for the Academic Leaders and Academic Backbones, Shaanxi Normal University [18QNGG009]
- National University Research Fund [GK201603107, GK201803038]
- DNL Cooperation Fund CAS [DNL180311]
- 111 Project [B14041]
- Changjiang Scholars and Innovative Research Team [IRT_14R33]
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Lead halide perovskites with good optoelectronic properties and high attenuation of high-energy radiation are great candidates for X-ray radiation detectors. Large area, dense, and thick films or wafers are a prerequisite for these applications. In this paper, a one-step heat-assisted high-pressure press method is developed to directly prepare a large (the largest has a diameter of 80 mm) and thickness- and shape-controlled phase-pure organic-inorganic hybrid CH3NH3PbI3 wafer of densely packed large microcrystals from raw powder materials. Meanwhile, this method uses no solvent to achieve essentially 100% material utilization. The obtained wafers show good ambipolar carrier mobilities of similar to 20 cm(2) V-1 s(-1) and a mu tau product as high as 3.84 x 10(-4) cm(2) V-1. Under an X-ray source using an acceleration voltage of 40 kV, the perovskite wafer-based X-ray detector shows an X-ray sensitivity as large as 1.22 x 10(5) mu C Gy(air)(-1) cm(-2) under a 10 V bias, the highest reported for any perovskite material. The method provides a convenient strategy for producing large perovskite wafers with good optoelectronic properties, which will facilitate the development of large perovskite devices.
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