Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 20, Pages 23323-23329Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c03419
Keywords
random laser; ultralow threshold; GaTe; grain boundary; fast Fourier transform
Funding
- National Natural Science Foundation of China (NSFC) [51728202, 51602200, 61874074]
- Thousand Young Talents Program of China
- Science and Technology Project of Shenzhen [JCYJ20170817100111548, JCYJ20170817101100705, ZDSYS201707271014468]
- Key Project of Department of Education of Guangdong Province [2016KZDXM008]
- Shenzhen Peacock Plan [KQTD2016053112042971]
- China Postdoctoral Science Foundation [2019M653039]
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Random lasing is a lasing phenomenon realized in random media, and it has attracted a great deal of attention in recent years. An essential requirement for strong random lasing is to achieve strong and recurrent scattering among grain boundaries of a disordered structure. Herein, we report a random laser (RL) based on individual polycrystalline GaTe microflakes (MFs) with a lasing threshold of 4.15 kW cm(-2), about 1-2 orders of magnitude lower than that of the reported single GaN microwire random laser. The strongly enhanced light scattering and trapping benefit from the reduced grain size in the polycrystalline GaTe MF, resulting in a ultralow threshold. We also investigate the dependence of spatially localized cavities' dimension on the pumping intensity profile and temperature. The findings provide a feasible route to realize RL with a low threshold and small size, opening up a new avenue in fulfilling many potential optoelectronic applications of RL.
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