Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 18, Pages 20645-20652Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c02393
Keywords
MoS2; phototransistor array; sputtering; electron beam irradiation; sulfurization
Funding
- Basic Science Research Program of the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2018R1A2B2003558, 2015R1A5A1037548, 2017R1D1A1B03032923, 2017R1D1A1B03035315]
- Gyeonggi-do Regional Research Center program of Gyeonggi province (GRRC Sungkyunkwan) [2017-B06]
- National Research Foundation of Korea [2017R1D1A1B03035315, 2015R1A5A1037548, 2017R1D1A1B03032923] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Two-dimensional molybdenum disulfide (MoS2) has emerged as a promising material for optoelectronic applications because of its superior electrical and optical properties. However, the difficulty in synthesizing large-scale MoS2 films has been recognized as a bottleneck in uniform and reproducible device fabrication and performance. Here, we proposed a radio-frequency magnetron sputter system, and post-treatments of electron beam irradiation and sulfurization to obtain large-scale continuous and high-quality multilayer MoS2 films. Large-area uniformity was confirmed by no deviation of electrical performance in fabricated MoS2 thin-film transistors (TFTs) with an average on/off ratio of 10(3) and a transconductance of 0.67 nS. Especially, the photoresponsivity of our MoS2 TFT reached 3.7 A W-1, which is a dramatic improvement over that of a previously reported multilayer MoS2 TFT (0.1 A W-1) because of the photogating effect induced by the formation of trap states in the band gap. Finally, we organized a 4 X 4 MoS2 phototransistor array with high photosensitivity, linearity, and uniformity for light detection, which demonstrates the great potential of 2D MoS2 for future-oriented optoelectronic devices.
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