Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 15, Pages 17857-17863Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c00951
Keywords
InGaN; template; vapor phase epitaxy; selective area growth; chemical mechanical polishing; micro-LEDs
Funding
- Swedish Foundation for Strategic Research under the project Energy-efficient LED-lighting Based on Nanowires [EM11-0015]
- Swedish Energy Agency
- Swedish Research Council
- Knut and Alice Wallenberg Foundation
- VINNOVA
- NanoLund
- Swedish Foundation for Strategic Research (SSF) [EM11-0015] Funding Source: Swedish Foundation for Strategic Research (SSF)
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In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {10 (1) over bar1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {10 (1) over bar1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {10 (1) over bar1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.
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