Journal
CARBON
Volume 99, Issue -, Pages 118-122Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2015.11.062
Keywords
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Funding
- National Natural Science Foundation of China [11225421, 11434010, 11474277]
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Stacking order of layered materials strongly influences their electronic properties. Bernal (AB) and rhombohedral (ABC) stacking are much common in few-layer graphenes. Here, we found that AB- and ABC-stacked few-layer graphenes can be well distinguished by whether their highest-frequency shear modes are observed or not in the Raman spectra at room temperature. This method can be expanded to Raman characterization of the stacking order in other two-dimensional layered materials. (C) 2015 Elsevier Ltd. All rights reserved.
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