Journal
APL PHOTONICS
Volume 5, Issue 1, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.5120029
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Funding
- ARPA-E [DE-AR000067]
- Institut Mines-Telecom
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This work investigates the performance of 1.3-mu m quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high degree of resistance to both incoherent and coherent optical feedbacks. 10 Gbps penalty-free transmissions are also unveiled under external modulation and at different temperatures. The paper draws attention on quantum dot lasers with p-doping that exhibit a better thermal resistance, a lower linewidth enhancement factor, a higher critical feedback level, and a better spectral stability with less intensity noise. Together, these properties make epitaxial quantum dot lasers with p-doping more promising for isolator-free and Peltier-free applications, which are meaningful for future high-speed photonic integrated circuits.
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