Journal
COATINGS
Volume 10, Issue 2, Pages -Publisher
MDPI
DOI: 10.3390/coatings10020134
Keywords
Thin film: sputtering; ITO; SiO2; low-temperature oxidation; touch screen panel; sapphire; transmittance
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Funding
- Priority Research Centers Program through the National Research Foundation of Korea (NRF), Ministry of Education [2019R1A6A1A03032988]
- International Science and Business Belt Program through the Ministry of Science and ICT [2015-DD-RD-0068-05]
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The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to similar to 72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.
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