Journal
RESULTS IN PHYSICS
Volume 16, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2019.102839
Keywords
Solar cell simulation; Perovskite; Defect density; Interface; SCAPS-1D
Funding
- Thailand's Education Hub for Southern Region of ASEAN Countries Project [THE-AC 062/2017]
- Solar Energy Research Institute of Universiti Kebangsaan Malaysia
- Institute of Sustainable Energy (ISE) of the Universiti Tenaga Nasional (@The National Energy University) [FRGS/1/2018/STG07/UNITEN/01/2]
- Municipal Solid Waste and Hazardous Waste Management Program
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In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency > 25% can be achieved at < 10(14) cm(-3) defect density and > 400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance.
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