4.7 Article

Individually resolved luminescence from closely stacked GaN/AlN quantum wells

Journal

PHOTONICS RESEARCH
Volume 8, Issue 4, Pages 610-615

Publisher

OPTICAL SOC AMER
DOI: 10.1364/PRJ.384508

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Funding

  1. National Key Research and Development Program of China [2017YFE0100300]
  2. Science Challenge Project [TZ2016003]
  3. National Natural Science Foundation of China [61734001, 61521004, 61774004]
  4. Deutsche Forschungsgemeinschaft (Research Instrumentation Program) [INST272/148-1]
  5. Deutsche Forschungsgemeinschaft (Collaborative Research Center) [SFB 787]

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Investigating closely stacked GaN/AlN multiple quantum wells (MQWs) by means of cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope, we have reached an ultimate spatial resolution of sigma(CL) = 1.8 nm. The pseudomorphically grown MQWs with high interface quality emit in the deep ultraviolet spectral range. Demonstrating the capability of resolving the 10.8 nm separated, ultra-thin quantum wells, a cathodoluminescence profile was taken across individual ones. Applying a diffusion model of excitons generated by a Gaussian-broadened electron probe, the spatial resolution of cathodoluminescence down to the free exciton Bohr radius scale has been determined. (c) 2020 Chinese Laser Press

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