Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 3, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201900892
Keywords
2D materials; ion transport; memristors; molybdenum disulfide; non-volatile resistive switching
Funding
- European Commission
- German Ministry of Education and Research, BMBF (NEUROTEC) [16ES1134]
- Graphene Flagship [785219]
- QUEFORMAL [829035]
Ask authors/readers for more resources
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS2) as the active material. The vertical heterostructures consist of silicon (Si), vertically aligned MoS2, and chrome/gold metal electrodes. Electrical characterizations reveal a bipolar and forming-free switching process with stable retention for at least 2500 s. Controlled experiments carried out in ambient and vacuum conditions suggest that the observed resistive switching is based on hydroxyl ions (OH-). These originate from catalytic splitting of adsorbed water molecules by MoS2. Experimental results in combination with analytical simulations further suggest that electric field driven movement of the mobile OH- ions along the vertical MoS2 layers influences the energy barrier at the Si/MoS2 interface. The scalable and semiconductor production compatible device fabrication process used in this work offers the opportunity to integrate such memristors into existing Si technology for future neuromorphic applications. The observed ion-based plasticity may be exploited in ionic-electronic devices based on transition metal dichalcogenides and other 2D materials for memristive applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available