4.5 Article

Self-Powered Solar-Blind Photodetectors Based on α/β Phase Junction of Ga2O3

Journal

PHYSICAL REVIEW APPLIED
Volume 13, Issue 2, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.13.024051

Keywords

-

Funding

  1. National Natural Science Foundation of China [61704153, 61774019]
  2. Zhejiang Public Service Technology Research Program/Analytical Test [LGC19F040001]
  3. Natural Science Foundation of Zhejiang Province [LY20F040005]
  4. Visiting Scholar Foundation of State Key Lab of Silicon Materials [SKL2019-08]
  5. Fundamental Research Funds of Zhejiang Sci-Tech University [2019Q061, 2019Q067]

Ask authors/readers for more resources

Self-powered Ga2O3-based solar-blind photodetectors have received attention recently due to the increased demand for energy saving, miniaturization, and high efficiency in devices. An ideal device structure consisting of a Ga2O3-based p-n junction is still difficult to obtain, since p-type doping is a major challenge. Although self-powered devices based on heterojunction are promising, there are two fatal disadvantages: (1) photosensitivity of the non-solar-blind region, on account of the narrower band gap of the heterojunction materials; and (2) poor quality of the epitaxial film due to lattice mismatch. In view of the various polymorphs of Ga2O3, we propose constructing a structure consisting of a Ga2O3 phase junction with alpha and beta phases (alpha/beta phase junction) for self-powered solar-blind photodetectors. The small lattice mismatch and similar band gap between alpha- and beta-Ga2O3 will solve the two problems outlined above. The formation of alpha- and beta-Ga(2)O(3)is expected to result in a type-II band alignment, promoting separation of photogenerated carriers, which transfer through the junction to the corresponding electrodes. Herein, the alpha/beta phase junction of Ga2O3 vertically aligned nanorod arrays with a thickness-controllable beta-Ga2O3 shell layer are fabricated by a low-cost and simple process of hydrothermal and postannealing treatment. Two different types of self-powered alpha/beta-Ga2O3 phase junction-based photodetectors, in the form of solid-state type and photoelectrochemical type, are constructed and realized. Our analysis shows that the constructed photodetectors are capable of highly efficient detection of solar-blind signal without any bias voltage. This work demonstrates the usefulness of using the alpha/beta-Ga2O3 phase junction in a self-powered solar-blind photodetector, which is not only energy efficient, but also potentially workable in outer space, at the south and north pole, and other harsh environments without external power for a long time.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available