Journal
NANOMATERIALS
Volume 9, Issue 12, Pages -Publisher
MDPI
DOI: 10.3390/nano9121783
Keywords
Bi2NiMnO6; thin films; diode effect; oxygen defect; conduction mechanism
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Funding
- National Natural Science Foundation of China [11574057, 51604087]
- Guangdong Provincial Natural Science Foundation of China [2016A030313718]
- Science and Technology Program of Guangdong Province of China [2016A010104018, 2017A010104022]
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Double perovskite Bi2NiMnO6 (BNMO) thin films grown on p-Si (100) substrates with LaNiO3 (LNO) buffer layers were fabricated using chemical solution deposition. The crystal structure, surface topography, surface chemical state, ferroelectric, and current-voltage characteristics of BNMO thin films were investigated. The results show that the nanocrystalline BNMO thin films on p-Si substrates without and with LNO buffer layer are monoclinic phase, which have antiferroelectric-like properties. The composition and chemical state of BNMO thin films were characterized by X-ray photoelectron spectroscopy. In the whole electrical property testing process, when the BNMO/p-Si heterojunction changed into a BNMO/LNO/p-Si heterojunction, the diode behavior of a single diode changing into two tail to tail diodes was observed. The conduction mechanism and temperature stability were also discussed.
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