Journal
NANO ENERGY
Volume 66, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2019.104145
Keywords
Thermoelectric; Power generation; Microelectronic cooling; Artificially tilted thermoelectric film devices
Categories
Funding
- National Natural Science Foundation of China [51620105014, 51572210, 51521001, 11834012]
- National Key R&D Program of China [2018YFB0703603]
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Large transverse output voltage of transverse thermoelectric film devices is key for their important applications. Currently, the transverse output voltage is only several to tens of mu V.K-1 due to the great challenge that multilayer films with a nanometer-scale thickness are tilted in transverse thermoelectric film devices. Herein, a novel misaligned mask method is developed to low-costly fabricate artificially tilted thermoelectric film devices (ATTFDs) with excellent transverse power generation and cooling performances through accurately controlling the tilted arrangement of nanometer-scale multilayer films. The huge transverse output voltage of 300 mu VK-1 and cooling temperature gradient of 68 K.mm(-1) are obtained for the first time in Bi/Bi0.5Sb1.5Te3 ATTFDs, which are comparable to those from expensive superlattice-based thermoelectric devices. Our work demonstrates that ATTFDs can be narrow-space applied to high-efficient film refrigerators in next-generation electronics and optoelectronics, high-sensitive thermal response sensors, thermoelectric-driven inorganic LED film devices.
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