Journal
NANO ENERGY
Volume 69, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2019.104438
Keywords
CIGS; Chalcopyrite; Cu-rich; High pressure; Selenization; DMF
Categories
Funding
- National Natural Science Foundation of China (NSFC) [21571106]
- Synergetic Innovation Centre for Organic Electronics and Information Displays
- Postgraduate Research and Practice Innovation Program of Jiangsu Province
- National Science Foundation [NNCI-1542101]
- University of Washington
- Molecular Engineering & Sciences Institute
- Clean Energy Institute
- National Institutes of Health
- Australian Renewable Energy Agency [RND011]
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Theoretical calculation suggests Cu-rich chalcopyrite absorbers contain less defects and have potential to achieve better performance than Cu-poor absorbers. However, this has not been demonstrated due to the detrimental Cu2-xSe impurity remaining in the absorber. Here, we report highly efficient Cu-rich chalcopyrite solar cells by selenizing dimethylformamide molecular precursor solution processed precursor films under high Ar pressure. Characterizations using XRD, Raman, SEM, TEM, c-AFM, PL, and glow discharge optical emission spectroscopy (GDOES) show high pressure selenization enables high quality Cu-rich chalcopyrite absorber materials with stoichiometric composition, smooth surface, high conductivity, and Cu2-xSe free grain boundaries, leading to efficient CuIn(S,Se)(2) and Cu(In,Ga)(S,Se)(2) devices with power conversion efficiency of 14.5% and 15.2%, both are the best performing chalcopyrite solar cells from non-hydrazine solutions. Our results demonstrate high Ar pressure selenization is a new strategy to fabricate high quality Cu-rich absorber which has great potential to further improve chalcopyrite solar cell efficiency.
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