Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 10, Issue 2, Pages 417-422Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2019.2963564
Keywords
Four terminal (4T) tandem solar cell; passivating contact Si solar cells; perovskite; tunnel oxide passivated contact (TOPCon) cell
Funding
- Pete Silas Chair in Chemical Engineering at Georgia Tech
- U.S. Department of Energy [DE-AC36-08GO28308]
- Alliance for Sustainable Energy, Limited Liability Company (LLC)
- Derisking Halide Perovskite Solar Cells program of the National Center for Photovoltaics - U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Solar Energy Technologies Office
- National Research Foundation of Korea (NRF), Ministry of Science, ICT, South Korea [NRF-2017R1A4A1015022]
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The rapid rise in single-junction perovskite solar cell (PSC) efficiencies, tunable bandgap, and low-cost solution processability make PSCs an attractive candidate for tandems with Si bottom cells. However, the challenge is to fabricate a high-performance semitransparent perovskite top cell in combination with an appropriate silicon bottom cell with high response to long wavelength photons that are filtered through the perovskite top cell. Currently, semitransparent perovskite cells show much lower performance compared with their opaque counterparts, while high-performance silicon bottom cells, such as heterojunction with intrinsic thin layer and interdigitated back contact, may be too expensive to meet the cost and efficiency targets for commercial viability. Here, we demonstrate a 26.7% perovskite-Si four terminal (4T) tandem cell comprising a highly efficient 17.8% CsFAMAPbIBr semitransparent, 1.63-eV bandgap perovskite top cell, and a >= 22% efficiency n-type Si bottom cell fabricated with a conventional boron diffused emitter on the front and carrier selective n(+) poly-Si/SiOx passivated contact on the rear. This is among the highest efficiency perovskite/Si 4T tandems published to date and represents the first report of the use of the high temperature-resistant single side n-tunnel oxide passivated contact Si cell in a 4T configuration.
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