4.6 Article

Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Journal

ADVANCED OPTICAL MATERIALS
Volume 8, Issue 8, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201900982

Keywords

narrow-band emission; refractory materials; Tamm plasmon polaritons; thermal emission; titanium nitrides

Funding

  1. Higher Education Sprout Project of the National Chiao Tung University
  2. Ministry of Education (MOE)
  3. Ministry of Science and Technology (MOST), Taiwan, ROC [MOST 107-2221-E-009 -046 -MY3, MOST 107-2218-E-009-056, MOST 108-2923-E-009 -003 -MY3]
  4. JST CREST Phase Interface Science for Highly Efficient Energy Utilization [JPMJCR13C3]
  5. PRESTO by JST [JPMJPR19I2]
  6. KAKENHI from JSPS, Japan [16H06364, 17K19045, 17H04801]
  7. Grants-in-Aid for Scientific Research [17K19045, 17H04801] Funding Source: KAKEN

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A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at approximate to 3.73 mu m with the bandwidth of 0.36 mu m in the experiment. High temperature stabilities are confirmed up to 500 and 1000 degrees C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN-insulator-TiN (TiN-metal-insulator-metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.

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