Journal
AIP ADVANCES
Volume 10, Issue 1, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.5130050
Keywords
-
Funding
- National Natural Science Foundation of China [61704005]
- VR innovation platform from Qingdao Science and Technology Commission and Magnetic Sensor innovation platform from Laoshan District
Ask authors/readers for more resources
Spin orbit torque magnetic random access memory (SOT-MRAM) has attracted massive research interests due to its promising application potential in high-speed computing systems (e.g. upper level caches). Here we propose an erasable spintronics memory based on a novel field-free SOT switching mechanism. The data writing is achieved through erase and subsequent program operations, both of which are implemented with unidirectional currents. For improving the storage density, the erase operation is shared by multiple bit-cells, meanwhile some access transistors could be replaced with diodes thanks to the use of unidirectional currents. The simulation results demonstrate that the proposed erasable spintronics memory is featured by sub-nanosecond write speed, femto-joule write energy and higher storage density than the conventional SOT-MRAMs. (C) 2020 Author(s).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available