Journal
SCIENTIFIC REPORTS
Volume 10, Issue 1, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-019-57227-8
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Funding
- Council of Scientific & Industrial Research, India [09/140(0162)/2016-EMR-I]
- University Grant Commission [16-6(DEC. 2017)/2018 (NET/CSIR)]
- Inter-University Accelerator Centre, New Delhi [IUAC XIII.7 UFR-63307]
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Defect states in ZnAl2O4 have a significant role in its applicability as a luminescent material. To understand the nature and distribution of defects in its crystal lattice, thermoluminescence (TL) study has been carried out. Excellent TL response is observed from gamma- and ultraviolet-irradiated samples at different doses and exposure durations, respectively. Different type of fuels employed in combustion synthesis show a remarkable effect on the trap distribution and hence luminescence properties. Shallow and deep traps are observed in crystals attributed to O- vacancies and F+ centers. The mechanism of trapping, retrapping and recombination have been depicted through schematic band model diagram. X-ray photoelectron spectroscopy indicated the presence of various types of defects specifically Al-Zn antisite defect, oxygen and zinc vacancies which are further upheld by photoluminescence and Raman spectroscopy. All results when summed up, predict ZnAl2O4 to be a quality material for dosimetry.
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