Journal
SCIENTIFIC REPORTS
Volume 10, Issue 1, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-020-57642-2
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Funding
- Samsung Display Co. Ltd.
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03012877, NRF-2019R1I1A2A01064153]
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2018M3C1B9088457]
- National Institute of Supercomputing and Network/Korea Institute of Science and Technology Information [KSC2017-C2-0043]
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Si doping was used to significantly improve the bias stability of ZnON thin-film transistors. Si 3W (similar to 1%) doped ZnON TFTs showed a saturation mobility of 19.70 cm(2)/Vs along with remarkable improvements in the threshold voltage shift for negative gate bias stress (NBS) within 1.69 V. The effects of Si doping were interpreted by the experimental correlation between device performance and physical analysis, as well as by the theoretical calculation. Si doping induces the reduction of N-related defects by increasing stoichiometric Zn3N2, and decreasing nonstoichiometric ZnxNy. In addition, Si doping reduces the band edge states below the conduction band. According to density functional theory (DFT) calculations, Si, when it substitutes for Zn, acts as a carrier suppressor in the ZnON matrix.
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