Journal
MATERIALS
Volume 13, Issue 2, Pages -Publisher
MDPI
DOI: 10.3390/ma13020434
Keywords
gallium oxide; silicon carbide; heterojunction diodes; thermal activation energy
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Funding
- NRF [2018R1D1A1B07047515]
- Korea Electric Power Corporation [R17XA05-60]
- National Research Foundation of Korea [2018R1D1A1B07047515] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of beta-Ga2O3 {(-201), (-401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N-2-annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the Ga2O3 film and Ga2O3-metal interface.
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