4.6 Article

Highly Deep Ultraviolet-Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Journal

MATERIALS
Volume 12, Issue 24, Pages -

Publisher

MDPI
DOI: 10.3390/ma12244046

Keywords

hexagonal boron nitride; highly DUV-transparent material; RF sputtering; low-temperature deposition

Funding

  1. A-STEP Program of the Japan Science and Technology Agency (JST) [AS2715025R]

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Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N-2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 degrees C in a N-2 ambient for 20 min. The phase of the highly DUV-transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 degrees C), which can provide protection from device performance degradation when applied to actual devices.

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