4.8 Article

Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions

Journal

NATURE COMMUNICATIONS
Volume 11, Issue 1, Pages -

Publisher

NATURE RESEARCH
DOI: 10.1038/s41467-020-14753-8

Keywords

-

Funding

  1. MOST 973 of China [2015CB856800]
  2. National Natural Science Foundation of China [51821001, 11704245, 21773287, 11974195]
  3. Natural Science Foundation of Shanghai [19ZR1475200]
  4. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
  5. Whiting School of Engineering, Johns Hopkins University

Ask authors/readers for more resources

The structures and properties of van der Waals (vdW) heterojunctions between semiconducting two-dimensional transition-metal dichalcogenides (2D TMDs) and conductive metals, such as gold, significantly influence the performances of 2D-TMD based electronic devices. Chemical vapor deposition is one of the most promising approaches for large-scale synthesis and fabrication of 2D TMD electronics with naturally formed TMD/metal vdW interfaces. However, the structure and chemistry of the vdW interfaces are less known. Here we report the interfacial reconstruction between TMD monolayers and gold substrates. The participation of sulfur leads to the reconstruction of Au {001} surface with the formation of a metastable Au4S4 interfacial phase which is stabilized by the top MoS2 and WS2 monolayers. Moreover, the enhanced vdW interaction between the reconstructed Au4S4 interfacial phase and TMD monolayers results in the transition from n-type TMD-Au Schottky contact to p-type one with reduced energy barrier height.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available