Journal
NATURE COMMUNICATIONS
Volume 11, Issue 1, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-020-14736-9
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Funding
- Shenzhen Key Laboratory Project [ZDSYS201603311644527]
- Shenzhen Fundamental Research Fund [JCYJ20150611092848134, JCYJ20150929170644623]
- Shenzhen Science and Technology Innovation Fund [KQCX20140522143114399]
- President's Fund [PF01000154]
- National Natural Science Foundation of China [11474365]
- Foundation of NANO X [18JG01]
- UK Engineering and Physical Sciences Research Council [EP/P006973/1]
- European project H2020-ICT-PICTURE [780930]
- Royal Academy of Engineering [RF201617/16/28]
- French government managed, ANR under the Investissements d'avenir [ANR-10-IRT-05, ANR-15-IDEX-02]
- French RENATECH network
- EPSRC [EP/J012904/1, EP/T01394X/1, EP/P006973/1] Funding Source: UKRI
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Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of similar to 0.6 mu W and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.
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