Journal
NATURE COMMUNICATIONS
Volume 10, Issue -, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-019-13495-6
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Funding
- MTA Premium Postdoctoral Research Program
- Knut and Alice Wallenberg Foundation through WBSQD2 project [2018.0071]
- Swedish Government Strategic Research Areas in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]
- Swedish e-Science Centre (SeRC)
- Swedish Research Council [VR 2016-04068]
- Carl-Trygger Stiftelse for Vetenskaplig Forskning [CTS 15:339]
- Ministry of Education and Science of the Russian Federation [K2-2019-001, 211]
- Hungarian NKFIH grants of the National Excellence Program of Quantumcoherent materials project [KKP129866]
- EU QuantERA Nanospin project [127902]
- EU H2020 Quantum Technology Flagship project ASTERIQS [820394]
- NVKP project [NVKP_16-1-2016-0043]
- National Quantum Technology Program [2017-1.2.1-NKP-2017-00001]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division
- DOE Office of Science [DE-AC02-06CH11357]
- Center for Nanoscale Materials, a U.S. Department of Energy Office of Science User Facility [DE-AC02-06CH11357]
- DOE, Office of Basic Energy Sciences
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Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron X-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy and show how this model explains these defects' robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.
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