Journal
SOLID-STATE ELECTRONICS
Volume 164, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2019.107701
Keywords
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Funding
- Brain Korea 21 Project
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry and Energy (MOTIE) [10067739, 10080575]
- Korea Semiconductor Research Consortium (KSRC)
- Synopsys Inc.
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067739, 10080575] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, tunnel field-effect transistor (TFET) which has surface Ge-rich SiGe nanowire as a channel has been demonstrated. There are improvements in terms of on-current and subthreshold swing (SS) comparing with control groups (constant Ge concentration SiGe TFET and Si TFET) fabricated by the same process flow except for the channel formation step. In order to obtain the concentration-graded SiGe channel, Ge condensation method which is a kind of oxidation is adopted. The rectangular shape of the channel becomes a rounded nanowire through the Ge condensation process. The TFET with the concentration-graded SiGe channel can improve drive current due to a smaller band gap at the Ge-condensed surface of the channel compared to Si or non-condensed SiGe channel TFET.
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