Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 203, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2019.110154
Keywords
Sb2Se3; Electrical conductivity; Magnetron sputtering; Quasi-homojunction; Thin film solar cells
Funding
- Key Project of Department of Education of Guangdong Province [2018KZDXM059]
- Natural Science Foundation of SZU [85304/00000297]
- National Natural Science Foundation of China [61404086]
- Program for Innovative Research Team in University of Ministry of Education of China [IRT13R54]
- Shenzhen Key Lab Fund [ZDSYS 20170228105421966]
- Science and Technology plan project of Shenzhen [JCYJ20180305124340951]
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Sb2Se3 is a promising candidate for environment-friendly and cost-efficiently thin film photovoltaics thanks to its material advantages and superior optoelectronic properties. However, it has intrinsically low electrical conductivity, which leads to unsatisfactory device performance and limited scope of applications. Herein, we demonstrated an effective strategy of electrical conductivity-induced Sb2Se3-based photovoltaic performance improvement. Three Sb2Se3-based targets with chemical composition of Sb2Se3, Sb2Se3.3 and Sb-2(Se0.9I0.1)(3) have been firstly prepared by using high-temperature melting technique. Then the high-quality thin films can be obtained through an effective Radio Frequency (RF) magnetron sputtering process. A novel Sb2Se3 quasi-homojunction thin film solar cell was fabricated for the first time and the highest power conversion efficiency reaches already a highly interesting 2.65%. The combined features of unique quasi-homojunction device structure and advantageous full-vacuum preparation process further demonstrated its attractive potential for thin film photovoltaic applications.
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