Journal
SEMICONDUCTORS
Volume 53, Issue 12, Pages 1688-1698Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782619160280
Keywords
microwaves; extremely high frequencies; THz; compact model; planar Schottky diode; whisker; air bridge
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Funding
- Ministry of Science and Higher Education of the Russian Federation [8.4029.2017/4.6]
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The broad range of possibilities for optimizing the design and electrical parameters of crystals of Schottky diodes, manufactured according to the mesa-substrate and mesa-mesa planar technologies with anode terminals in the form of an air bridge with a whisker, along with the use of higher quality compact models, make it possible to efficiently exploit the physical potential of Schottky contacts when designing monolithic integrated circuits according to diode technologies, increase their reliability, and overcome the significant lag of semiconductor electronics behind optoelectronics in the terahertz (THz) frequency range.
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