☆
4.4
Article
Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)
Rate this paper
The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now