Journal
SCRIPTA MATERIALIA
Volume 178, Issue -, Pages 307-312Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2019.11.055
Keywords
Direct bonding; Al-2O3/YSZ heterostructure; Interface
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Funding
- National Natural Science Foundation of China [51975151]
- Heilongjiang Provincial Natural Science Foundation of China [LH2019E041]
- China Postdoctoral Science Foundation [2017M610207]
- China Scholarship Council [201906120176]
- Lam Research Corporation
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We developed a plasma activation process using a gas mixture of O-2/NH3/H2O for direct bonding, which realized the combination of bulk aluminum oxide (Al2O3) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal-oxide-semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al2O3/SiO2 and YSZ/SiO2 heterostructures. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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