4.7 Article

Growth and gas sensing properties of methylammonium tin iodide thin film

Journal

SCRIPTA MATERIALIA
Volume 178, Issue -, Pages 108-113

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2019.10.049

Keywords

Halide perovskite; Lead-free; Thin film; Gas sensor; CVD

Funding

  1. National Research Foundation of Korea (NRF) - Korean government (MSIP) [NRF-2017R1A4A1015022]
  2. Korea Basic Science Institute (KBSI) [T38663]
  3. Industrial Material Fundamental Technology Development Program - Ministry of Trade, Industry & Energy (MI, Korea) [10063473]
  4. Korea Evaluation Institute of Industrial Technology (KEIT) [10063473] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Methylammonium tin iodide (MASnI(3)) is a p-type semiconductor with excellent optical versus electrical properties. This work introduces a process for growing high-purity MASnI(3) thin films via thermal evaporation. The growth process of the MASnI(3) thin film was proposed and discussed. The gas sensing properties of the MASnI(3) thin film were investigated at room temperature with/without illumination. The film exhibited the highest selectivity toward NO2 (detection limit of 25 ppb). Furthermore, the sensing performance of the device was excellent comparing with those of recent NO2 sensing candidates. The gas sensing mechanism of the device was discussed. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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