Journal
SCRIPTA MATERIALIA
Volume 174, Issue -, Pages 58-61Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2019.08.027
Keywords
LiNbO3/SiC structure; Room-temperature bonding; Surface activated bonding method
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Funding
- Japan Society for the Promotion of Science (JSPS) [JP17H04925]
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Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements. (C) 2019 Published by Elsevier Ltd on behalf of Acta Materialia Inc.
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