Journal
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
Volume 21, Issue 1, Pages 195-204Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/14686996.2020.1736948
Keywords
Memristor; interface control; nanocrystal; iron oxide; silicon; germanium; resistive switching characteristics
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Funding
- Japan Society for the Promotion of Science [16H02078, 19H00853, 19K22110]
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For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a well-controlled interface (Fe3O4/GeOx/Ge) composed of high-crystallinity Fe3O4 and high-quality GeOx layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of similar to 90%) and relatively high Off/On resistance ratio (similar to 58). The high-quality interface enables electric field application to Fe3O4 and GeOx near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices. [GRAPHICS] .
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