Journal
SCIENCE
Volume 367, Issue 6480, Pages 900-+Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aay5533
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Funding
- Army Research Office [W911NF-17-1-0323]
- Air Force Office of Scientific Research [FA9550-16-1-0252]
- Hertz Foundation
- National Science Foundation Graduate Research Fellowship Program [1650114]
- Department of Energy Office of Sciences Basic Energy Sciences program [DE-FG02-08ER46524]
- David and Lucille Packard Foundation
- Alfred P. Sloan foundation
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The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moire miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.
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