Journal
SCIENCE
Volume 366, Issue 6470, Pages 1225-+Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aax9406
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Funding
- NSF [DMR-1420709]
- SHyNE, a node of the NSF's National Nanotechnology Coordinated Infrastructure [NSF ECCS-1542205]
- AFOSR [FA9550-14-1-0231, FA9550-15-1-0029]
- DARPA [D18AC00015KK1932]
- NSF EFRI [EFMA-1641099]
- ONR [N00014-17-1-3026]
- Department of Defense through the NDSEG Program
- KAKENHI [17H01056, 18H03770]
- Swedish Energy Agency [43611-1]
- Swedish Research Council [VR 2016-04068]
- Carl Tryggers Stiftelse [CTS 15:339]
- Knut and Alice Wallenberg Foundation [KAW 2018.0071]
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Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.
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