4.5 Article

Physical properties of Pb doped ZnS thin films prepared by ultrasonic spray technique

Journal

PHYSICS LETTERS A
Volume 384, Issue 26, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.physleta.2019.126199

Keywords

ZnS thin films; Spray ultrasonic technique; Pb-doped ZnS; XRD; SEM; Optical and electrical properties

Ask authors/readers for more resources

In the present work, high quality Pb doped ZnS thin films were deposited on glass substrates at 450 degrees C using spray ultrasonic technique. The dependence of the structural, morphological and optical properties of the films on the lead (Pb) doping amount was investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis-NIR spectrophotometry, and four-point method. The improvement of the obtained Pb:ZnS thin films properties were discussed as a function of Pb concentration (0.5 to 2 at.%). The average crystallite size of Pb:ZnS was found in the range of 25-37 nm. The scanning electron microscopy (SEM) reveals that the films are continuous, homogeneous and dense. The UV-vis-NIR spectroscopy characterizations demonstrated that all the films exhibit good transmittance (60-70%) in the visible region and their optical band gap energy (E-g) changes from 3.92 to 3.6 eV. The films electrical resistivity showed an apparent dependence on Pb content. (C) 2019 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available