Journal
PHYSICAL REVIEW LETTERS
Volume 123, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.123.247402
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Funding
- AMOS program, Chemical Sciences, Geosciences, and Biosciences Division, Basic Energy Sciences, U.S. Department of Energy [DE-AC02-76SF00515]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4545]
- National Science Foundation [DMR-1708457, ECCS-1542152]
- National Science Foundation MRSEC program through Columbia in the Center for Precision Assembly of Superstratic and Superatomic Solids [DMR-1420634]
- National Science Foundation MRSEC program through NSF newLAW program [EFMA-1741691]
- Elemental Strategy Initiative by the MEXT, Japan
- A3 Foresight by JSPS
- CREST, JST
- Viterbi Fellowship of the Erna and Andrew Viterbi Department of Electrical Engineering, Technion, Israel
- Koret Foundation, USA
- Natural Sciences and Engineering Research Council (NSERC) of Canada through a PGS-D fellowship [PGSD3-502559-2017]
- North-German Supercomputing Alliance (HLRN) [bep00047]
- Deutsche Forschungsgemeinschaft (DFG) within the Cluster of Excellence Engineering of Advanced Materials [EXC 315]
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We report light emission around 1 eV (1240 nm) from heterostructures of MoS2 and WSe2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our findings gain access to the interlayer physics of the intrinsically incommensurate MOS2/WSe2 heterostructure, including moire and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.
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