4.5 Article

Enhanced Thermoelectric Performance of Bi2Te2.7Se0.3/Bi2S3 Synthesized by Anion Exchange Method

Journal

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201900679

Keywords

Bi2Te2.7Se0.3; Bi2Te2.7Se0.3/Bi2S3; heterostructures; thermal conductivity; thermoelectric materials

Funding

  1. Key Scientific Research Fund Project of Xihua University [Z17103]
  2. Education Department project for Sichuan province [182498]
  3. Open Research Subject of Key Laboratory of Special Materials and Manufacturing Technology in Sichuan Provincial Universities [szjj2017-061]
  4. National Natural Science Foundation of China [51572226]
  5. Sichuan Science and Technology Program [15TD0014]
  6. College Students' Innovation and Entrepreneurship Training Program of Xihua University [S201910623064]

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Decoupling the electric conductivity, Seebeck coefficient, and thermal conductivity is a core issue to improve the properties of thermoelectric materials by tuning the electron and phonon transport properties. Herein, Bi2Te2.7Se0.3/Bi2S3 heterostructure is successfully synthesized by a simple anion exchange method with Bi2Te2.7Se0.3 as the starting material. The Bi2Te2.7Se0.3/Bi2S3 heterointerfaces can achieve an effective phonon scattering and significant decrease in thermal conductivity, while maintaining a high power factor, resulting in an enhanced figure of merit (ZT). By controlling the concentration of Bi2Te2.7Se0.3/Bi2S3 heterointerfaces, the carrier-transporting and phonon-scattering behaviors can be simultaneously optimized. A maximum ZT of 0.7 is obtained at 473 K, which is 23% higher than that of pure Bi2Te2.7Se0.3. In addition, the average ZT at 300-548 K increases from 0.49 to 0.61, which is 25% higher than that of pure Bi2Te2.7Se0.3.

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