Related references
Note: Only part of the references are listed.Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Si Joon Kim et al.
JOM (2019)
Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films
Aniruddh Shekhawat et al.
THIN SOLID FILMS (2019)
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300 degrees C low temperature process with plasma-enhanced atomic layer deposition
Takashi Onaya et al.
MICROELECTRONIC ENGINEERING (2019)
Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
Young Hwan Lee et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
Si Joon Kim et al.
APPLIED PHYSICS LETTERS (2018)
A Review on Ge Nanocrystals Embedded in SiO2 and High-k Dielectrics
David Lehninger et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2018)
Low temperature thin films for next-generation microelectronics (invited)
Jurriaan Schmitz
SURFACE & COATINGS TECHNOLOGY (2018)
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
T. Ali et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
Si Joon Kim et al.
APPLIED PHYSICS LETTERS (2018)
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2 capacitors due to stress-induced crystallization at low budget
Si Joon Kim et al.
APPLIED PHYSICS LETTERS (2017)
Formation of orthorhombic (Zr,Ta)O2 in thin Zr-Ta-O films
D. Lehninger et al.
APPLIED PHYSICS LETTERS (2017)
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
Milan Pesic et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
Min Hyuk Park et al.
ADVANCED MATERIALS (2015)
Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes
Min Hyuk Park et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)
Antiferroelectricity in thin-film ZrO2 from first principles
Sebastian E. Reyes-Lillo et al.
PHYSICAL REVIEW B (2014)
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
Min Hyuk Park et al.
APPLIED PHYSICS LETTERS (2013)
Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
Stefan Mueller et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Mueller et al.
NANO LETTERS (2012)
Ferroelectricity in Gd-Doped HfO2 Thin Films
S. Mueller et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2012)
Phase transitions in ferroelectric silicon doped hafnium oxide
T. S. Boescke et al.
APPLIED PHYSICS LETTERS (2011)
Ferroelectricity in hafnium oxide thin films
T. S. Boescke et al.
APPLIED PHYSICS LETTERS (2011)
Ferroelectricity in yttrium-doped hafnium oxide
J. Mueller et al.
JOURNAL OF APPLIED PHYSICS (2011)
Grain boundary mediated leakage current in polycrystalline HfO2 films
K. McKenna et al.
MICROELECTRONIC ENGINEERING (2011)
Structural and dielectric properties of crystalline and amorphous ZrO2
D Vanderbilt et al.
THIN SOLID FILMS (2005)
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric
F Lime et al.
SOLID-STATE ELECTRONICS (2003)