Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 217, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900732
Keywords
molecular beam epitaxy growth; normally-off field-effect transistor; ultra-pure GaN; AlGaN heterostructrues; 2D electron gas
Funding
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [348524434]
- Russian Science Foundation [19-42-04119]
- German Federal Ministry for Economic Affairs and Energy (BMWi) [03ET1398B]
- TU Dresden
- Russian Science Foundation [19-42-04119] Funding Source: Russian Science Foundation
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The presence of a 2D electron gas (2DEG) in GaN/AlxGa1-xN heterostructures with low aluminum mole fraction is found to depend on the residual background impurity concentration in the GaN/AlGaN layer stack. At a residual donor level of 2 x 10(16) cm(-3), a 2DEG is absent at 300 K in dark environment. Such a 2DEG can be generated at the GaN/AlGaN interface either by illumination with ultraviolet light or by applying an electrostatic potential. The latter results in inherently normally-off switching characteristics of lateral field-effect transistors.
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